3B Scientific UE3080200-115 Experiment: Bipolar Transistors, 115 V

3B Scientific, UE3080200-115, Experiment for Electricity: Bipolar Transistors, 115 V, 50/60 Hz

UE3080200-115 Includes Only:

• Plug-in Board for Components
• Set of 10 Jumpers
• Linear Resistor, 1 kOhm
• Linear Resistor, 47 kOhm
• Potentiometer 220 Ohm, 3 W, P4W50
• Potentiometer 1 kOhm, 1 W, P4W50
• NPN Transistor, BD 137, P4W50
• Analogue Multimeter ESCOLA 30
• Set of 15 Experiment Leads, 75 cm 1 mm²;
• AC/DC Power Supply 0 − 12 V, 3 A (115 V, 50/60 Hz)

Features:

• Objective: Messung der relevanten Kennlinien eines npn-Transistors

A bipolar transistor is an electronic component composed of three alternating p-doped and n-doped semiconductor layers called the base, the collector and the emitter. Depending on the sequence of the layers, the transistor may either be termed npn or pnp. The response of a bipolar transistor may be distinctively described by, for example, an input characteristic, a control characteristic and an output characteristic. In this experiment, examples of these are to be measured for an npn transistor, displayed on a graph and evaluated.

For more information, please see Data Sheet